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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9087693 B1

PDFFull Text
Date of Patent:
Jul. 21, 2015

Filed:

Aug. 02, 2013

Method for manufacturing silicon carbide semiconductor device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Inventors:

Hideki Hayashi, Osaka, JP;

Takeyoshi Masuda, Osaka, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

Attorneys:

Venable LLP

Michael A. Sartori

Tamatane J. Aga

Primary Examiner:

Mary Wilczewski

Assistant Examiner:

Erik T Peterson

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/02 (2006.01); H01L 29/51 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 21/3065 (2006.01); H01L 29/16 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); H01L 21/02636 (2013.01); H01L 21/049 (2013.01); H01L 21/3065 (2013.01); H01L 29/42368 (2013.01); H01L 29/511 (2013.01); H01L 29/66068 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01);
Abstract

A silicon carbide substrate including a first layer having first conductivity type, a second layer having second conductivity type, and a third layer having the first conductivity type is formed. A trench provided with an inner surface having a side wall surface and a bottom surface is formed, the side wall surface extending through the third layer and the second layer and reaching the first layer, the bottom surface being formed of the first layer. A silicon film is formed to cover the bottom surface. A gate oxide film is formed on the inner surface by oxidation in the trench. The gate oxide film includes a first portion formed by oxidation of the silicon carbide substrate, and a second portion formed by oxidation of the silicon film on the bottom surface. Accordingly, a method for manufacturing a silicon carbide semiconductor device having a high breakdown voltage is provided.

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