The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

Feb. 28, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Michele M. Franceschini, White Plains, NY (US);

Hillery C. Hunter, Deerfield, IL (US);

Ashish Jagmohan, Irvington, NY (US);

Charles A. Kilmer, Essex Junction, VT (US);

Kyu-hyoun Kim, Mount Kisco, NY (US);

Luis A. Lastras-Montano, Cortland Manor, NY (US);

Moinuddin K. Qureshi, Atlanta, GA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/10 (2006.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 29/50 (2006.01); G11C 7/04 (2006.01); G11C 7/10 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G06F 11/10 (2013.01); G06F 11/1048 (2013.01); G11C 7/04 (2013.01); G11C 7/1006 (2013.01); G11C 29/4401 (2013.01); G11C 29/50016 (2013.01); G11C 2029/0409 (2013.01); G11C 2029/0411 (2013.01); G11C 2029/4402 (2013.01);
Abstract

Errors on a dynamic random access memory ('DRAM') having an error correcting decoder ('ECC') can be detected by the ECC when reading a row of the DRAM. The ECC includes error correcting code logic. If errors are detected that cannot be corrected by the ECC logic, test control logic determines weak cell information for the row, evaluates the errors using the weak cell information, and may correct the errors. The weak cell information may include weak cell locations and failure values.


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