The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

May. 22, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Gael Close, Rueschlikon, CH;

Daniel Krebs, Rueschlikon, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 11/5678 (2013.01); G11C 13/003 (2013.01); G11C 13/0009 (2013.01); G11C 16/0483 (2013.01); G11C 2211/5611 (2013.01); G11C 2211/5613 (2013.01); G11C 2213/53 (2013.01); G11C 2213/75 (2013.01);
Abstract

A memory apparatus includes a plurality of gated phase-change memory cells having s≧2 programmable cell-states, the cells each having a gate and being arranged in series between a source and drain; a bias voltage generator configured to apply a bias voltage to the gate of each cell; and a controller configured to control the bias voltage generator, in a write operation for programming the state of a cell, to apply a first bias voltage to the gate of each cell except an addressed cell for the write operation, wherein application of the first bias voltage to a cell reduces the cell resistance such that application of a programming signal between the source and drain effects programming of the addressed cell only.


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