The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Jan. 09, 2013
Applicant:
Mstar Semiconductor, Inc., Hsinchu County, TW;
Inventor:
Tao Zhou, Shanghai, CN;
Assignee:
MSTAR SEMICONDUCTOR, INC., Hsinchu County, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/07 (2006.01); G11C 16/34 (2006.01); G11C 29/00 (2006.01); G11C 16/22 (2006.01);
U.S. Cl.
CPC ...
G06F 11/0703 (2013.01); G11C 16/225 (2013.01); G11C 16/3445 (2013.01); G11C 29/00 (2013.01); G11C 29/82 (2013.01);
Abstract
A repair method for an abnormal-erase memory block of a non-volatile flash memory is provided. The method includes steps of: sequentially scanning bit data in a page of a block when reading data in a NAND flash; determining whether the page is an abnormal-erase page; setting logic '0' bit data in the page to logic '1' when the page is an abnormal-erase page; and re-erasing the block.
Zhou, Tao. (2015). Repair method and device for abnormal-erase memory block of non-volatile flash memory (U.S. Patent No. 9086961). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9086961
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