The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2015
Filed:
Mar. 04, 2013
Hong Kong Applied Science and Technology Research Institute Company Limited, Hong Kong, HK;
Chi Fung Lok, Hong Kong, HK;
Le Feng Shen, Shenzhen, CN;
Hong Kong Applied Science and Technology Research Institute Company Limited, Hong Kong Science Park, Shatin, New Territories, Hong Kong, CN;
Abstract
A circuit and method for a bandgap voltage reference operating at 1 volt or below is disclosed, wherein the operational amplifier (A) drives resistors (R, R) only so that both the flicker noise contribution and the process sensitivity due to the conventional metal oxide semiconductor (MOS) devices used as a current mirror within the proportional-to-absolute-temperature (PTAT) loop are eliminated. Two symmetric resistive divider pairs formed by (R/R, R/RB) are inserted to scale down both the base-emitter voltages (V, V) of bipolar transistors (Q, Q) and the PTAT current (I) so that an output reference voltage (V) becomes scalable. Proper bias currents through transistors (M, M), which are used to bias (Q, Q) and (R/R, R/R) respectively, are produced by an additional V-I converter () using Vitself, resulting in a final process, voltage and temperature (PVT) insensitive output reference voltage.