The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2015

Filed:

Sep. 01, 2010
Applicants:

Masaharu Nakamura, Osaka, JP;

Yoshinari Miyamoto, Osaka, JP;

Tetsuro Tojo, Osaka, JP;

Inventors:

Masaharu Nakamura, Osaka, JP;

Yoshinari Miyamoto, Osaka, JP;

Tetsuro Tojo, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 5/16 (2006.01); C04B 35/575 (2006.01); C04B 35/645 (2006.01); C04B 41/00 (2006.01); B82Y 30/00 (2011.01); C04B 35/52 (2006.01); C04B 35/626 (2006.01); C04B 35/628 (2006.01); C04B 41/50 (2006.01); C04B 41/87 (2006.01); C23C 14/06 (2006.01); C01B 31/36 (2006.01); C04B 111/00 (2006.01);
U.S. Cl.
CPC ...
C04B 41/009 (2013.01); B82Y 30/00 (2013.01); C01B 31/36 (2013.01); C04B 35/522 (2013.01); C04B 35/575 (2013.01); C04B 35/62675 (2013.01); C04B 35/62834 (2013.01); C04B 35/62884 (2013.01); C04B 35/62897 (2013.01); C04B 35/645 (2013.01); C04B 41/5025 (2013.01); C04B 41/87 (2013.01); C23C 14/0635 (2013.01); C04B 2111/00405 (2013.01); C04B 2235/425 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/666 (2013.01); C04B 2235/72 (2013.01); C04B 2235/77 (2013.01); C04B 2235/781 (2013.01); C04B 2235/96 (2013.01); Y10T 428/265 (2015.01); Y10T 428/2991 (2015.01);
Abstract

Produced is a silicon carbide-coated carbon base material in which a silicon carbide coating is densely and uniformly formed on the surface of a carbon base material, such as graphite. A production process includes the steps of: preparing a carbon base material the surface of which has basal plane sites of an SPcarbon structure with no dangling bond and edge plane sites of an SPcarbon structure with a dangling bond; and reacting the surface of the carbon base material with SiO gas in an atmosphere at a temperature of 1400° C. to 1600° C. and a pressure of 1 to 150 Pa to form silicon carbide, whereby the carbon base material coated with silicon carbide is produced.


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