The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Dec. 17, 2013
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Masamichi Suzuki, Tokyo, JP;
Hirotaka Nishino, Yokohama, JP;
Kazuya Matsuzawa, Kamakura, JP;
Izumi Hirano, Kuwana, JP;
Takao Marukame, Tokyo, JP;
Yusuke Higashi, Kawasaki, JP;
Takahiro Kurita, Sagamihara, JP;
Yuki Sasaki, Yokohama, JP;
Yuichiro Mitani, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an embodiment, a semiconductor circuit includes a substrate, a tunnel oxide film, a charge storage film, a blocking layer, and plural nodes. The substrate is made of a semiconductor in which two diffusion layers each serving as either a source or a drain are formed. The tunnel oxide film is formed on a region of the substrate between the diffusion layers. The charge storage film is formed on the tunnel oxide layer and stores charge. The blocking layer is formed between the charge storage film and a gate electrode and has layers of a first oxide film, a nitride film and a second oxide film to have a thickness of 5 nm or larger but 15 nm or smaller. The nodes allow external application of voltages so that the source and the drain are reversed and allow detection a gate voltage, a drain current and a substrate current.