The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

May. 30, 2012
Applicants:

Naohito Kanie, Kariya, JP;

Toshiaki Nagase, Kariya, JP;

Inventors:

Naohito Kanie, Kariya, JP;

Toshiaki Nagase, Kariya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/00 (2006.01); H03K 17/082 (2006.01); H02M 1/32 (2007.01); H03K 17/12 (2006.01); H03K 17/16 (2006.01); H02M 1/088 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); H02M 1/088 (2013.01); H02M 1/32 (2013.01); H03K 17/122 (2013.01); H03K 17/165 (2013.01);
Abstract

A switching circuit () includes: a plurality of insulated gate transistors (-) connected in parallel between a high voltage line (L) and a low voltage line (L); gate resistors (-) each provided for one of the plurality of insulated gate transistors (-) and each including a first terminal connected to a gate electrode of each of the insulated gate transistors (-); and a single gate voltage application unit () configured to apply pulsing gate voltage to the gate electrode of each of the insulated gate transistors (-) via the gate resistors (-). A second terminal of each of the gate resistors (-) provided for each of the plurality of insulated gate transistors (-) is connected to the gate voltage application unit () via a gate voltage apply line (L), and a single capacitor is connected between the gate voltage apply line (L) and the high voltage line (L).


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