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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9083005 B1

PDFFull Text
Expired
Date of Patent:
Jul. 14, 2015

Filed:

Apr. 24, 2013

Reactor for atomic layer deposition (ald), application to encapsulation of an oled device by deposition of a transparent ai2o3 film

Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventor:

Tony Maindron, Grenoble, FR;

Assignee:

Commissariat a l'Energie Atomique et aux Energies Alternatives, Paris, FR;

Attorney:

Norton Rose Fulbright US LLP

Primary Examiner:

Charles Garber

Assistant Examiner:

Syed Gheyas

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/56 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/44 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 51/56 (2013.01); C23C 16/403 (2013.01); C23C 16/4401 (2013.01); C23C 16/455 (2013.01); C23C 16/45544 (2013.01); C23C 16/45555 (2013.01); C23C 16/45591 (2013.01); H01L 51/5237 (2013.01);
Abstract

The present invention relates to a reactor for atomic layer deposition (ALD), comprising a reaction chamber comprising a platen and bounded internally by surfaces; at least one inlet orifice and at least one outlet orifice, each emerging from one of the surfaces bounding the chamber. The reactor furthermore comprises, within it, at least one wall apertured with at least one orifice, the apertured wall extending around the platen and over at least most of the height between the lower surface and the upper surface, at least one orifice in at least one of the apertured walls not facing the inlet orifice so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen.

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Maindron, Tony. (2015). Reactor for atomic layer deposition (ald), application to encapsulation of an oled device by deposition of a transparent ai2o3 film (U.S. Patent No. 9083005). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9083005

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