The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Oct. 10, 2013
Applicant:
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Inventors:
Susumu Soeya, Ibaraki, JP;
Takahiro Odaka, Ibaraki, JP;
Toshimichi Shintani, Ibaraki, JP;
Junji Tominaga, Ibaraki, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); C30B 29/46 (2006.01); C30B 29/68 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/144 (2013.01); C30B 29/46 (2013.01); C30B 29/68 (2013.01); H01L 27/2436 (2013.01); H01L 45/06 (2013.01); H01L 45/1625 (2013.01); Y10T 428/24975 (2015.01);
Abstract
A phase-change memory and a semiconductor recording reproducing device capable of reducing consumed power are provided. A SnTe/SbTeSL film obtained by depositing a SnTefilm and a SbTefilm layer by layer contains a SnTe/SbTesuperlattice phase formed of SnTe and SbTe, a SnSbTe alloy phase, and a Te phase. The SnTe/SbTesuperlattice phase is diluted by the SnSbTe alloy phase and the Te phase. Here, X of the SnTefilm is represented by 4 at. %≦X≦55 at. %.