The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Sep. 26, 2013
Applicant:

Panasonic Corporation, Osaka, JP;

Inventors:

Hideaki Murase, Osaka, JP;

Yoshio Kawashima, Osaka, JP;

Atsushi Himeno, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/2409 (2013.01); H01L 45/08 (2013.01); H01L 45/124 (2013.01); H01L 45/1233 (2013.01); H01L 45/1286 (2013.01); H01L 45/146 (2013.01); H01L 45/1666 (2013.01); H01L 45/1675 (2013.01);
Abstract

A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer which is in contact with the second electrode; wherein the electrically-conductive layer covers an entire of the second electrode and at least a portion of the side wall protective layer located outward relative to the second electrode, when viewed from a thickness direction; and the side wall protective layer extends across the second electrode to a position above an upper end of the second electrode such that an upper end of the side wall protective layer is located above the upper end of the second electrode, when viewed from a side.


Find Patent Forward Citations

Loading…