The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Aug. 20, 2012
Toshimichi Shintani, Ibraraki, JP;
Takahiro Morikawa, Ibaraki, JP;
Takahiro Odaka, Ibaraki, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An object of the present invention is to provide a technique for suppressing thermal disturbance of a phase change memory device having a three-dimensional structure. In the phase change memory device having a three-dimensional structure, a material having a high thermal conductivity is used as a gate insulation film of a MOS transistor for selection, and causes heat transmitted to a Si channel layer from a phase change recording film to successfully diffuse to a gate electrode. In this way, since heat generated from a recording bit diffuses to a non-selected bit adjacent to it, it is possible to suppress thermal disturbance. BN, AlO, AlN, TiO, SiN, ZnO and the like are useful as a gate insulation film having a high thermal conductivity.