The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Sep. 26, 2013
Advanced Optoelectronic Technology, Inc.;
Shih-Cheng Huang, Hsinchu, TW;
Po-Min Tu, Hsinchu, TW;
Peng-Yi Wu, Hsinchu, TW;
Wen-Yu Lin, Hsinchu, TW;
Chih-Pang Ma, Hsinchu, TW;
Tzu-Chien Hong, Hsinchu, TW;
Chia-Hui Shen, Hsinchu, TW;
ADVANCED OPTOELECTRONIC TECHNOLOGY, INC., Hsinchu Hsien, TW;
Abstract
A semiconductor optoelectronic structure with increased light extraction efficiency, includes a substrate; a buffer layer is formed on the substrate and includes a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer is formed on the buffer layer and includes an n-type conductive layer formed on the buffer layer, an active layer formed on the n-type conductive layer, and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer is formed on the semiconductor layer; a p-type electrode is formed on the transparent electrically conductive layer; and an n-type electrode is formed on the n-type conductive layer.