The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Oct. 21, 2013
Alphabet Energy, Inc, Hayward, CA (US);
Barbara Wacker, Saratoga, CA (US);
Mario Aguirre, Livermore, CA (US);
Alphabet Energy, Inc., Hayward, CA (US);
Abstract
Nanostructured thermoelectric elements are made from planar uniwafer processing methods. The method includes producing either n-type or p-type thermoelectric uniwafer structure bearing nanostructure material embedded in a low thermal conductivity fill material. The method further includes partially cutting the uniwafer structure to form a plurality of chip structures separated by trenches. The method includes filling the trenches with the fill material to surround the nanostructure material within each chip structure. The method further includes additionally planar processing to form both frontend and backend conductive contact layers respectively coupled to frontend regions and backend regions of the chip structures. Additionally, the modified thermoelectric uniwafer structure is cut to turn the chip structures to bulk-sized nanostructured thermoelectric legs, each bulk-sized nanostructured thermoelectric leg being wrapped around by the fill material and ready for assembling thermoelectric modules.