The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Oct. 07, 2011
Applicants:

Hojung Syn, Seoul, KR;

Hyunjin Yang, Seoul, KR;

Junghoon Choi, Seoul, KR;

Youngjoo Eo, Seoul, KR;

Inventors:

Hojung Syn, Seoul, KR;

Hyunjin Yang, Seoul, KR;

Junghoon Choi, Seoul, KR;

Youngjoo Eo, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0747 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/022441 (2013.01); Y02E 10/52 (2013.01);
Abstract

A back contact solar cell and a method for manufacturing the back contact solar cell are discussed. The back contact solar cell includes a substrate made of crystalline silicon having a first conductivity type, a passivation layer on one side of the substrate, an antireflection layer on the passivation layer, a first electrode on the other side of the substrate, a second electrode on the other side of the substrate and separated from the first electrode, a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type, and a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type. The passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide.


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