The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Dec. 21, 2014
Applicant:

AU Optronics Corp., Hsin-Chu, TW;

Inventors:

Peng Chen, Hsin-Chu, TW;

Shuo-Wei Liang, Hsin-Chu, TW;

Assignee:

AU Optronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/052 (2014.01); H01L 31/0224 (2006.01); H01L 31/065 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022458 (2013.01); H01L 31/065 (2013.01); H01L 31/18 (2013.01); Y02E 10/50 (2013.01);
Abstract

A solar cell is provided. The substrate of the solar cell has heavily-doped regions and lightly-doped regions. The anode and the cathode are disposed on the back surface of the substrate, and thus the amount of incident light on the front surface of the substrate is increased. The anode and the cathode are in contact with the heavily doped regions to form selective emitter structure, and thus the contact resistance is reduced. The lightly-doped regions, which are not in contact with the anode and the cathode, have lower saturation current, and thus recombination of hole-electron pairs is reduced, and absorption of infrared light is increased.


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