The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Sep. 05, 2013
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Takeshi Sakaguchi, Yokkaichi, JP;
Hirokazu Sugiyama, Mie-gun, JP;
Yoshihisa Fujii, Yokkaichi, JP;
Shinichi Sotome, Yokkaichi, JP;
Tadayoshi Watanabe, Tsukuba, JP;
Koichi Matsuno, Mie-gun, JP;
Naoki Kai, Kuwana, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A semiconductor device including a first isolation region dividing a semiconductor substrate into first regions; memory cells each including a tunnel insulating film, a charge storing layer, an interelectrode insulating film, and a control gate electrode above the first region; a second isolation region dividing the substrate into second regions in a peripheral circuit region; and a peripheral circuit transistor including a gate insulating film and a gate electrode above the second region. The first isolation region includes a first trench, a first element isolation insulating film filled in a bottom portion of the first trench, and a first gap formed between the first element isolation insulating film and the interelectrode insulating film. The second isolation region includes a second trench and a second element isolation insulating film filled in the second trench. The first and the second element isolation insulating films have different properties.