The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Sep. 13, 2012
Applicants:

Zhihong Chen, Valhalla, NY (US);

Aaron Daniel Franklin, Croton-on-Hudson, NY (US);

Shu-jen Han, Cortlandt Manor, NY (US);

Inventors:

Zhihong Chen, Valhalla, NY (US);

Aaron Daniel Franklin, Croton-on-Hudson, NY (US);

Shu-Jen Han, Cortlandt Manor, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78684 (2013.01); H01L 29/1606 (2013.01); H01L 29/4908 (2013.01); H01L 29/66742 (2013.01); H01L 29/78648 (2013.01);
Abstract

An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel. The channel comprises a bilayer graphene layer formed on the first dielectric layer. The first dielectric layer provides a substantially flat surface on which the channel is formed. A second dielectric layer formed over the bilayer graphene layer and a local second gate formed over the second dielectric layer. Each of the local first and second gates is capacitively coupled to the channel of the bilayer graphene layer. The local first and second gates form a first pair of gates to locally control a first portion of the bilayer graphene layer.


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