The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Jan. 14, 2014
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Satoshi Ito, Eniwa, JP;

Hiroyuki Oikawa, Chitose, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); G02F 1/136 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78633 (2013.01); H01L 27/124 (2013.01); H01L 27/1218 (2013.01); G02F 1/136 (2013.01);
Abstract

An electrooptic device substrate includes a scan line that is provided on an element substrate, a foundation insulating layer, a semiconductor layer provided on the foundation insulating layer, a gate insulating layer, recesses that are provided at both sides of the semiconductor layer so as to penetrate through the foundation insulating layer and the gate insulating layer, a gate electrode that is provided on the gate insulating layer and is electrically connected to the scan line in the recesses, an insulating interlayer that covers the gate insulating layer, the gate electrode, and the recesses, and a data line that is provided on the insulating interlayer so as to overlap with the scan line, the semiconductor layer, the gate electrode, and the recesses. The recesses include first recesses that overlap with the scan line and second recesses that extend to outer sides of the scan line.


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