The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Mar. 10, 2014
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Tetsuro Nozu, Tokyo, JP;
Kabushiki Kaisha Toshiba, Minato-Ku, Tokyo, JP;
Abstract
This device includes a first semiconductor layer of the first conduction-type. A second semiconductor layer of the first conduction-type is provided above the first semiconductor layer. Gate electrodes respectively have one end located at the second semiconductor layer and other end located at the first semiconductor layer. The gate electrodes extend at a first direction. Gate dielectric films are provided between the first semiconductor layer and the gate electrodes. A plurality of first insulating films are provided between the second semiconductor layer and the gate electrodes and are thicker than the gate dielectric films. A first electrode is provided at a shallower position than the other end between adjacent ones of the gate electrodes and contacts the first and the second semiconductor layer and the first insulating films. A second electrode is provided at an opposite side of the first layer against to the second semiconductor layer.