The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

May. 17, 2012
Applicants:

Jaroslaw Dabrowski, Frankfurt, DE;

Wolfgang Mehr, Friedersdorf, DE;

Johann Christoph Scheytt, Frankfurt, DE;

Grzegorz Lupina, Berlin, DE;

Inventors:

Jaroslaw Dabrowski, Frankfurt, DE;

Wolfgang Mehr, Friedersdorf, DE;

Johann Christoph Scheytt, Frankfurt, DE;

Grzegorz Lupina, Berlin, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/737 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7376 (2013.01); H01L 29/0821 (2013.01); H01L 29/0895 (2013.01); H01L 29/1004 (2013.01); H01L 29/1606 (2013.01); H01L 29/7606 (2013.01);
Abstract

A junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, characterized in that the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer.


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