The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Feb. 28, 2013
Applicant:

Corning Incorporated, Corning, NY (US);

Inventors:

Yi-An Chen, New Taipei, TW;

Yung-Jean Lu, Taipei, TW;

Windsor Pipes Thomas, III, Painted Post, NY (US);

Assignee:

Corning Incorporated, Corning, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/15 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 21/4846 (2013.01); H01L 23/5384 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/15 (2013.01); H01L 23/49827 (2013.01); H01L 2224/16 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/73265 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06572 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A three-dimensional integrated circuit (3D-IC) which incorporates a glass interposer and a method for fabricating the three-dimensional integrated circuit (3D-IC) with the glass interposer are described herein. In one embodiment, the 3D-IC incorporates a glass interposer which has vias formed therein which are not filled with a conductor that allow for precision metal-to-metal interconnects (for example) between redistribution layers. In another embodiment, the 3D-IC incorporates a glass interposer which has vias and has a coefficient of thermal expansion (CTE) that is different than the CTE of silicon which is 3.2 ppm/° C.


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