The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Nov. 22, 2013
Sony Corporation, Tokyo, JP;
Satoshi Taniguchi, Kanagawa, JP;
Katsuhiko Takeuchi, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a channel layer; and a high resistance layer that is provided on the channel layer, and is made of a semiconductor with high resistance which has a conduction band position higher than that of the semiconductor which forms the channel layer. The semiconductor device includes a first conduction-type low resistance region provided on a surface layer of the high resistance layer, and is made of a semiconductor including first conduction type impurities. The semiconductor device includes: a source electrode and a drain electrode that are connected to the high resistance layer, in a position crossing the low resistance region; a gate insulating film provided on the low resistance region; and a gate electrode provided on the low resistance region via the gate insulating film. The semiconductor device includes current block regions between the low resistance region, and between the source electrode and the drain electrode respectively.