The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Apr. 01, 2009
Shien Cho, Kanagawa, JP;
Shien Cho, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;
Abstract
A semiconductor memory device has a cover film (), between a memory cell (gate electrode, and source and drain regionsand) and an interlayer insulating film (), the cover film covering the memory cell, wherein the cover film () has a hydrogen storage film () that is a coating film on a surface of a silicon nitride film (), and in addition, has a hydrogen storage film () on a bottom surface of the silicon nitride film (). The hydrogen storage films (and) are silicon nitride oxide films that include SiNO. By suppressing diffusion of hydrogen atoms to a memory cell from an interlayer insulating film, reliability of operation of the memory cell is improved.