The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Jul. 24, 2012
Applicants:

Yong-hwan Ryu, Yongin-si, KR;

Dae Ho Kim, Daegu, KR;

Hong Sick Park, Suwon-si, KR;

Shin IL Choi, Hwaseong-si, KR;

Inventors:

Yong-Hwan Ryu, Yongin-si, KR;

Dae Ho Kim, Daegu, KR;

Hong Sick Park, Suwon-si, KR;

Shin Il Choi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01); H01L 27/12 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 27/1262 (2013.01);
Abstract

A method of forming a thin film transistor array panel includes: forming a first insulating layer on a substrate; forming an amorphous carbon layer on the first insulating layer; forming a second insulating layer on the amorphous carbon layer; forming an opening in the amorphous carbon layer by patterning the second insulating layer and the amorphous carbon layer; and forming a trench in the first insulating layer by etching the first insulating layer, the etching the first insulating layer using the amorphous carbon layer including the opening as a mask.


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