The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Mar. 07, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Manoj Joshi, Clifton Park, NY (US);

Johannes Marinus van Meer, Delmar, NY (US);

Manfred Eller, Beacon, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01L 29/0638 (2013.01); H01L 29/66795 (2013.01);
Abstract

One illustrative method disclosed includes, among other things, forming a fin in a substrate, forming a well implant region in at least the substrate, forming a punch-stop implant region in the fin, performing at least one neutral implantation process with at least one neutral implant material to form a neutral boron-diffusion-blocking implant region in the fin, wherein an upper surface of the neutral boron-diffusion-blocking implant region is positioned closer to an upper surface of the fin than either the punch-stop implant region or the well implant region and, after forming the well implant region, the punch-stop implant region and the neutral boron-diffusion-blocking implant region, forming a gate structure above the fin.


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