The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Feb. 14, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Eun-sun Youm, Seongnam-si, KR;

Sang-young Park, Suwon-si, KR;

Jin-taek Park, Hwaseong-si, KR;

Yong-top Kim, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/115 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01);
Abstract

A nonvolatile memory device having a vertical structure and a method of manufacturing the same, the nonvolatile memory device including a channel region that vertically extends from a substrate; gate electrodes on the substrate, the gate electrodes being disposed along an outer side wall of the channel region and spaced apart from one another; and a channel pad that extends from one side of the channel region to an outside of the channel region, the channel pad covering a top surface of the channel region.


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