The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Feb. 27, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Keisuke Nakatsuka, Kobe, JP;
Shigeru Kawanaka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an embodiment, a semiconductor storage device includes an SRAM cell. The SRAM cell includes first and second transfer gates each comprising a pass gate. The pass gate includes first and second tunnel transistors. The first tunnel transistor includes a first conductivity type first diffusion region as a source or drain region, a second conductivity type second diffusion region as a drain or source region, and a gate electrode supplied with a control voltage. The second tunnel transistor includes a first conductivity type first diffusion region as a source or drain region, a second conductivity type second diffusion region as a drain or source region electrically connected to the second diffusion region of the first tunnel transistor, and a gate electrode electrically connected to the gate electrode of the first tunnel transistor.