The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Dec. 14, 2011
Applicants:
Ning Qu, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Inventors:
Ning Qu, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Assignee:
ROBERT BOSCH GMBH, Stuttgart, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0615 (2013.01); H01L 29/36 (2013.01); H01L 29/872 (2013.01); H01L 29/8725 (2013.01);
Abstract
A trench Schottky diode is described, which has a highly doped substrate of a first conductivity type and an epitaxial layer of the same conductivity type that is applied to the substrate. At least two trenches are introduced into the epitaxial layer. The epitaxial layer is a stepped epitaxial layer that has two partial layers of different doping concentrations.