The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Nov. 18, 2013
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Xiang Zhang, Guangdong, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
The present invention provides a polysilicon manufacturing method that controls a growth direction of polysilicon, including the following steps: (1) forming a first buffer layer () on a substrate () through deposition; (2) applying a masking operation to form a lens-like structure () on a surface of the first buffer layer (); (3) depositing and forming an amorphous silicon layer () on the first buffer layer () of which the surface comprises the lens-like structure () formed thereon; (4) subjecting the amorphous silicon layer () to rinsing; (5) irradiating the amorphous silicon layer () with an intense light () from the side of the substrate () so as to generate a crystal seed at a bottom of the amorphous silicon layer (); and (6) applying a laser annealing operation to the amorphous silicon layer () that comprises a crystal seed generated therein so as to have amorphous silicon contained in the amorphous silicon layer () crystallized and forming a polysilicon layer (). The present invention enables control of the growth direction of polysilicon.