The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Mar. 19, 2013
Applicant:
Lockheed Martin Corporation, Bethesda, MD (US);
Inventors:
Jonathan W. Ward, Fairfax, VA (US);
Michael J. O'Connor, Manassas Park, VA (US);
Assignee:
Lockheed Martin Corporation, Bethesda, MD (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C01B 31/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02282 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01B 31/043 (2013.01); C01B 31/0446 (2013.01); C01B 31/0476 (2013.01); C01B 31/0484 (2013.01); H01L 21/0262 (2013.01); H01L 21/02491 (2013.01); H01L 21/02527 (2013.01); H01L 21/02628 (2013.01); H01L 21/31127 (2013.01); H01L 29/1606 (2013.01); C01B 2204/02 (2013.01); C01B 2204/04 (2013.01); C01B 2204/22 (2013.01);
Abstract
Methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices, is provided. One method includes the steps of preparing a dispersion of functionalized graphene in a solvent; and applying a coating of said dispersion onto a substrate and evaporating the solvent to form a layer of functionalized graphene; and defunctionalizing the graphene to form a graphene layer on the substrate.