The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Feb. 25, 2014
Sukjin Chung, Hwaseong-si, KR;
Jongcheol Lee, Seoul, KR;
Younsoo Kim, Yongin-si, KR;
Chayoung Yoo, Suwon-si, KR;
Geunkyu Choi, Hwaseong-si, KR;
Sukjin Chung, Hwaseong-si, KR;
JongCheol Lee, Seoul, KR;
Younsoo Kim, Yongin-si, KR;
Chayoung Yoo, Suwon-si, KR;
Geunkyu Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of RM(NRR)and M(ORR) and using a silicon precursor expressed by HSi(NRR). Each of 'R', 'R', “R”, “R”, and “R” are hydrogen or hydrocarbon; “R” is different than “R” and “R”; “x” is in the range of 3 to 5; “y” is in the range of 1 to 4; “z” is in the range of 2 to 3; and “M” is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.