The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Dec. 30, 2011
Applicants:
Cheul Hee Koo, Icheon-si, KR;
Byoung Young Kim, Icheon-si, KR;
Inventors:
Cheul Hee Koo, Icheon-si, KR;
Byoung Young Kim, Icheon-si, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/06 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/06 (2013.01); G11C 16/26 (2013.01); G11C 16/3454 (2013.01);
Abstract
A program method of a nonvolatile memory device includes a pre-program verify step for verifying a threshold voltage of a selected memory cell; a step of setting a bit line voltage of the selected memory cell according to the threshold voltage of the selected memory cell which is determined through the pre-program verify step; a step of applying a program voltage to the selected memory cell set with the bit line voltage; and a post-program verify step for verifying a programmed state of the selected memory cell applied with the program voltage.