The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Feb. 21, 2013
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Taikan Kanou, Kawasaki, JP;

Masaru Fujimura, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); G03F 7/20 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
G03F 7/2022 (2013.01); H01L 23/48 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of manufacturing a semiconductor device including a first region and a second region contacting the first region along a boundary line, includes forming a pattern having an on-boundary-line line portion with a width defined by a first line which is arranged in the first region and is parallel to the boundary line, and a second line which is arranged in the second region and is parallel to the boundary line. The forming the pattern includes independently performing, for a photoresist applied on a substrate, first exposure for defining the first line, and second exposure for defining the second line, and developing the photoresist having undergone the individually performing the first exposure and the second exposure.


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