The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Oct. 24, 2008
Applicants:

Ibraheem Haneef, Lahore, PK;

Howard P. Hodson, Godmanchester, GB;

Robert Miller, Cambridge, GB;

Florin Udrea, Cambridge, GB;

Inventors:

Ibraheem Haneef, Lahore, PK;

Howard P. Hodson, Godmanchester, GB;

Robert Miller, Cambridge, GB;

Florin Udrea, Cambridge, GB;

Assignee:

Cambridge Enterprise Limited, Cambridge, Cambridgeshire, GB;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01F 1/68 (2006.01); G01F 1/684 (2006.01); G01F 1/708 (2006.01); G01N 3/24 (2006.01);
U.S. Cl.
CPC ...
G01F 1/6845 (2013.01); G01F 1/7084 (2013.01); G01N 3/24 (2013.01); G01N 2203/0226 (2013.01); G01N 2203/0623 (2013.01);
Abstract

This invention relates to hot film shear stress sensors and their fabrication. We describe a hot film shear stress sensor comprising a silicon substrate supporting a membrane having a cavity underneath, said membrane bearing a film of metal and having electrical contacts for heating said film, and wherein said membrane comprises a silicon oxide membrane, where in said metal comprises aluminium or tungsten, and wherein said membrane has a protective layer of a silicon-based material over said film of metal. In preferred embodiments the sensor is fabricated by a CMOS process and the metal comprises aluminium or tungsten.


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