The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Sep. 12, 2012
Applicants:

Angelo Antonio Merassi, Caponago, IT;

Biagio DE Masi, Corsano, IT;

Alberto Corigliano, Milan, IT;

Inventors:

Angelo Antonio Merassi, Caponago, IT;

Biagio De Masi, Corsano, IT;

Alberto Corigliano, Milan, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01C 19/56 (2012.01); G01P 15/125 (2006.01); G01C 19/5762 (2012.01); G01C 19/5755 (2012.01);
U.S. Cl.
CPC ...
G01C 19/5762 (2013.01); G01C 19/5755 (2013.01); G01P 15/125 (2013.01);
Abstract

A microelectromechanical sensor includes: a supporting structure, having at least one first electrode and one second electrode, which form a capacitor; and a sensing mass made of non-conductive material, which is arranged so as to interact with an electric field associated to the capacitor and is movable with respect to the supporting structure according to a degree of freedom so that a relative position of the sensing mass with respect to the first electrode and to the second electrode is variable in response to external stresses. The sensing mass is made of a material selected in the group consisting of: intrinsic semiconductor materials, oxides of semiconductor materials, and nitrides of semiconductor materials.


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