The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Aug. 05, 2013
Applicant:
Triquint Semiconductor, Inc., Hillsboro, OR (US);
Inventors:
Hailin Han, Oak Ridge, NC (US);
Ezio Perrone, Munich, DE;
Assignee:
TriQuint Semiconductor, Inc., Hillsboro, OR (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/24 (2006.01); H03F 3/193 (2006.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 3/193 (2013.01); H03F 2203/21131 (2013.01);
Abstract
A radio frequency (RF) power amplifier (PA) may include a first transistor and a second transistor. A first power cell may be coupled with the first transistor, and a second power cell may be coupled with the second transistor. In embodiments, the first transistor may be scaled to operate at a first current density, while the second transistor may be scaled to operate at a second current density.
Han, Hailin. (2015). Split biased radio frequency power amplifier with enhanced linearity (U.S. Patent No. 9077296). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9077296
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile