The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Mar. 16, 2013
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Young Soo Ahn, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); G11C 16/0483 (2013.01); G11C 2213/18 (2013.01); G11C 2213/53 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01);
Abstract
A resistive memory device includes word lines stacked on top of one another, at least one first selection line formed over the word lines, a first channel layer passing through the word lines and the first selection line, a first phase change material layer formed in the first channel layer and overlapping the word lines, and a first insulating layer formed in the first channel layer and overlapping the first selection line.
Ahn, Young. (2015). Resistive memory device and method of manufacturing the same (U.S. Patent No. 9076958). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9076958
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile