The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Dec. 28, 2012
Applicants:

Tsinghua University, Beijing, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Jun Zhu, Beijing, CN;

Hao-Su Zhang, Beijing, CN;

Zhen-Dong Zhu, Beijing, CN;

Qun-Qing Li, Beijing, CN;

Guo-Fan Jin, Beijing, CN;

Shou-Shan Fan, Bejing, CN;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/58 (2010.01); H01L 33/44 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/22 (2013.01); H01L 33/44 (2013.01);
Abstract

A light emitting diode includes a substrate, a buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. The cermet layer is on the second semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode is electrically connected to the second semiconductor layer.


Find Patent Forward Citations

Loading…