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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9076921 B1

PDFFull Text
Expired
Date of Patent:
Jul. 07, 2015

Filed:

Jul. 20, 2009

Dark current reduction for large area photodiodes

Applicant:

Jurgen Michel, Arlington, MA (US);

Inventor:

Jurgen Michel, Arlington, MA (US);

Assignee:

Massachusetts Institute of Technology, Cambridge, MA (US);

Attorney:

Gesmer Updegrove LLP

Primary Examiner:

Marvin Payen

Assistant Examiner:

Jeremy Joy

Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 21/20 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1828 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01); H01L 31/1032 (2013.01); H01L 31/1035 (2013.01); H01L 31/109 (2013.01); H01L 31/184 (2013.01); Y02E 10/543 (2013.01); Y02E 10/544 (2013.01);
Abstract

A method of fabricating a large area photodiode is provided. The method includes providing a substrate having a first contact layer formed thereon. Also, the method includes forming a dielectric layer on the first contact layer and patterning selective areas of the dielectric layer to form a plurality of dielectric windows. Each of the dielectric windows has an open region exposing the first contact layer. Furthermore, the method includes epitaxially growing photodiode material(s) in the dielectric windows, wherein each of the dielectric windows are individualized photodiode structures.

Find Patent Forward Citations

Michel, Jurgen. (2015). Dark current reduction for large area photodiodes (U.S. Patent No. 9076921). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9076921

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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