The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Jul. 20, 2009
Applicant:
Jurgen Michel, Arlington, MA (US);
Inventor:
Jurgen Michel, Arlington, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 21/20 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1828 (2013.01); H01L 27/1463 (2013.01); H01L 27/14643 (2013.01); H01L 31/1032 (2013.01); H01L 31/1035 (2013.01); H01L 31/109 (2013.01); H01L 31/184 (2013.01); Y02E 10/543 (2013.01); Y02E 10/544 (2013.01);
Abstract
A method of fabricating a large area photodiode is provided. The method includes providing a substrate having a first contact layer formed thereon. Also, the method includes forming a dielectric layer on the first contact layer and patterning selective areas of the dielectric layer to form a plurality of dielectric windows. Each of the dielectric windows has an open region exposing the first contact layer. Furthermore, the method includes epitaxially growing photodiode material(s) in the dielectric windows, wherein each of the dielectric windows are individualized photodiode structures.