The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Mar. 01, 2012
Applicants:

Dario Rapisarda, Villard Bonnot, FR;

Joël Dufourcq, Puyoo, FR;

Simon Perraud, Bandol, FR;

Olivier Poncelet, Grenoble, FR;

Inventors:

Dario Rapisarda, Villard Bonnot, FR;

Joël Dufourcq, Puyoo, FR;

Simon Perraud, Bandol, FR;

Olivier Poncelet, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); C09K 13/06 (2006.01); H01L 31/032 (2006.01); H01L 31/0463 (2014.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); C09K 13/06 (2013.01); H01L 31/0322 (2013.01); Y02E 10/541 (2013.01); H01L 31/0463 (2014.12);
Abstract

The present invention relates to a process for selective wet chemical etching of a thin-film substrate comprising a CIGS surface layer. The present invention also relates to a process for producing cells in series for thin-film photovoltaic modules, which process implements the selective wet chemical etching process according to the invention. The present invention furthermore relates to a process for creating small patterns, such as for example monolithic interconnects, in thin-film photovoltaic devices, which process implements the selective wet chemical etching process according to the invention.


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