The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Mar. 08, 2011
Applicant:
Angelo Mascarenhas, Golden, CO (US);
Inventor:
Angelo Mascarenhas, Golden, CO (US);
Assignee:
Alliance for Sustainable Energy, LLC, Golden, CO (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 29/66 (2006.01); H01L 31/0304 (2006.01); H01L 31/0687 (2012.01); H01L 29/207 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 29/66318 (2013.01); H01L 31/03042 (2013.01); H01L 31/06875 (2013.01); H01L 29/207 (2013.01); Y02E 10/544 (2013.01); H01L 29/737 (2013.01);
Abstract
Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.