The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Jul. 03, 2014
Applicant:

Seiko Epson Corporation, Shinjuku-ku, JP;

Inventor:

Noriyuki Nakamura, Sakata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 21/00 (2006.01); H01L 31/0232 (2014.01); H01L 27/144 (2006.01); H01L 31/0216 (2014.01); H01L 31/102 (2006.01); H01L 31/103 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 27/1446 (2013.01); H01L 27/14623 (2013.01); H01L 27/14629 (2013.01); H01L 31/02162 (2013.01); H01L 31/102 (2013.01); H01L 31/103 (2013.01);
Abstract

A photodetector device includes: a first semiconductor region of a first conductivity type electrically connected to a first external electrode: a second semiconductor region of a second conductivity type formed on the first semiconductor region; a third semiconductor region of the first conductivity type formed on the second semiconductor region; and a plurality of fourth semiconductor regions of the second conductivity type formed on the second semiconductor region, each of the plurality of fourth semiconductor regions being surrounded by the third semiconductor region, including a second conductivity type impurity having a concentration higher than a concentration of the second semiconductor region, and electrically connected to a second external electrode.


Find Patent Forward Citations

Loading…