The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
May. 01, 2014
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventor:
Jung Hun Jang, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 29/778 (2006.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 29/7787 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 29/2003 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/1305 (2013.01);
Abstract
A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate, a transition layer disposed on the initial buffer layer, and a device structure disposed on the transition layer. The transition layer includes at least one of AlGaN (where 0<x<1) layers provided on the initial buffer layer and an inserted buffer layer provided at least one of between the AlGaN layers, at a lower end portion of the transition layer, or at an upper end portion of the transition layer.