The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Dec. 13, 2012
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 27/108 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/28518 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01); H01L 29/66666 (2013.01);
Abstract
A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.