The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Mar. 12, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

David H. Allen, Rochester, MN (US);

Douglas M Dewanz, Rochester, MN (US);

David P. Paulsen, Dodge Center, MN (US);

John E. Sheets, II, Zumbrota, MN (US);

Kelly L. Williams, Rochester, MN (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 29/4236 (2013.01); H01L 21/823814 (2013.01); H01L 29/78 (2013.01); H01L 29/66545 (2013.01); H01L 24/64 (2013.01); H01L 23/5222 (2013.01); H01L 23/5286 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01);
Abstract

A semiconductor device and a method of manufacture are provided. The semiconductor device includes one or more layers having channels adapted to carry signals or deliver power. The semiconductor device may include at least two channels having a substantially equivalent cross-sectional area. Conductors in separate channels may have different cross-sectional areas. A spacer dielectric on a side of a channel may be included. The method of manufacture includes establishing a signal conductor layer including a first channel and a second channel having a substantially equivalent cross-sectional area, introducing a spacer dielectric on a side of the second channel, introducing a first conductor in the first channel having a first cross-sectional area, and introducing a second conductor in the second channel having a second cross-sectional area where the second cross-sectional area is smaller than the first cross-sectional area.


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