The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Sep. 20, 2012
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Frank Fournel, Villard-Bonnot, FR;

Maxime Argoud, Lyons, FR;

Jeremy Da Fonseca, Teche, FR;

Hubert Moriceau, Saint-Egreve, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/48 (2006.01); H01L 21/50 (2006.01); H01L 21/762 (2006.01); H01L 21/18 (2006.01); H01L 21/20 (2006.01); H01L 31/18 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76259 (2013.01); H01L 21/187 (2013.01); H01L 21/2007 (2013.01); H01L 31/1892 (2013.01); Y02E 10/50 (2013.01); H01L 29/0603 (2013.01);
Abstract

A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy Ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds Si—O—Si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy Ei takes a first value Ei1 in step c) and a second value Ei2 in step f), with Ei1>E0 and Ei2<Ef.


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