The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Aug. 31, 2012
Applicants:

Soichiro Kitazaki, Mie-ken, JP;

Masaru Kidoh, Mie-ken, JP;

Mitsuru Sato, Mie-ken, JP;

Ryota Katsumata, Mie-ken, JP;

Tadashi Iguchi, Mie-ken, JP;

Inventors:

Soichiro Kitazaki, Mie-ken, JP;

Masaru Kidoh, Mie-ken, JP;

Mitsuru Sato, Mie-ken, JP;

Ryota Katsumata, Mie-ken, JP;

Tadashi Iguchi, Mie-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 27/11582 (2013.01); H01L 27/11565 (2013.01);
Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes forming a plurality of insulating isolation sections provided so as to extend in a first direction, isolate the stacked body in a second direction, and have a projection projecting from the stacked body. Each insulating isolation section has a side wall including recessed sections and projected sections repeated along the first direction. The method includes forming a sidewall film on a side wall of the projection of the insulating isolation section, and forming a plurality of first holes surrounded by the sidewall film and isolated by the sidewall film in the first direction, between the plurality of insulating isolation sections. The method includes forming a second hole in the stacked body provided under the first hole by etching with the insulating isolation section and the sidewall film used as a mask.


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