The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Jan. 07, 2014
Applicant:
Samsung Electro-mechanics Co., Ltd., Gyunggi-do, KR;
Inventors:
Assignee:
Samsung Electro-Mechanics Co., Ltd., Gyunggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 21/265 (2006.01); H01L 29/36 (2006.01); H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66348 (2013.01); H01L 29/7825 (2013.01); H01L 21/22 (2013.01); H01L 29/4236 (2013.01); H01L 29/66325 (2013.01); H01L 29/7393 (2013.01); H01L 21/265 (2013.01); H01L 29/7397 (2013.01); H01L 29/36 (2013.01);
Abstract
Disclosed herein is a power semiconductor device including: a base substrate having one surface and the other surface and formed of a first conductive type drift layer; a first conductive type diffusion layer formed on one surface of the base substrate and having a concentration higher than that of the first conductive type drift layer; and a trench formed so as to penetrate through the second conductive type well layer and the first conductive type diffusion layer from one surface of the base substrate including the second conductive type well layer in a thickness direction.