The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Aug. 31, 2012
Applicants:

Roberto Gaddi, S-Hertogenbosch, NL;

Richard L. Knipe, McKinney, TX (US);

Robertus Petrus Van Kampen, S-Hertogenbosch, NL;

Anartz Unamuno, Dresden, DE;

Inventors:

Roberto Gaddi, S-Hertogenbosch, NL;

Richard L. Knipe, McKinney, TX (US);

Robertus Petrus Van Kampen, S-Hertogenbosch, NL;

Anartz Unamuno, Dresden, DE;

Assignee:

CAVENDISH KINETICS, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/00 (2006.01); H01L 49/02 (2006.01); H01G 5/18 (2006.01); H01G 5/38 (2006.01); H01G 5/40 (2006.01); H01H 59/00 (2006.01); H03K 17/16 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01G 5/18 (2013.01); H01G 5/38 (2013.01); H01G 5/40 (2013.01); H01H 59/0009 (2013.01); H03K 17/162 (2013.01); H03K 17/6872 (2013.01); H03K 2217/0009 (2013.01); H03K 2217/0036 (2013.01); H03K 2217/009 (2013.01);
Abstract

The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.


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